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FCPF650N80Z - MOSFET

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.

In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.

Overview

FCPF650N80Z — N-Channel SuperFET® II MOSFET August 2015 FCPF650N80Z N-Channel SuperFET® II MOSFET 800 V, 10 A, 650.

Key Features

  • RDS(on) = 530 mΩ (Typ. ).
  • Ultra Low Gate Charge (Typ. Qg = 27 nC).
  • Low Eoss (Typ. 2.8 uJ @ 400V).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 124 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.
  • ESD Improved Capability.