FCPF650N80Z datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* RDS(on) = 530 mΩ (Typ.)
* Ultra Low Gate Charge (Typ. Qg = 27 nC)
* Low Eoss (Typ. 2.8 uJ @ 400V)
* Low Effective Output Capacitance (Typ. Coss(eff.) = .

Application

Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family t.

Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to .

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